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High-luminosity(AlGaInP)Leadless Chip LED
GM5JO95200AE series
I Outline Dimensions
3.5
4.5
3.2
2.4
0.7
1.5
Anode
Cathode mark
Cathode
1
2
1.5
1.5
Device center
Recommended PWB pattern for soldering
1.Pin connections
1Cathode
2Anode
2.Unspecified tolerance:?.3
I Directive Characteristics
0
-20?/DIV>
+20?/DIV>
+40?/DIV>
+60?/DIV>
+80?/DIV>
-40?/DIV>
-60?/DIV>
-80?/DIV>
80
40
20
0
60
100
GM5JJ95200AE
GM5JS95200AE
GM5JV95200AE
Emitting color
Orange
Sunset orange
Amber
Material
AlGaInP on GaAs
AlGaInP on GaAs
AlGaInP on GaAs
Power dissipation
P
(mW)
65
65
65
Forward current
IF
(mA)
25
25
25
Peak forward current
IFM
*1
(mA)
30
30
30
Derating factor
(mA/贑)
DC
0.50
0.50
0.50
Pulse
0.60
0.60
0.60
Reverse voltage
VR
(V)
5
5
5
Operating temperature
Topr
(贑)
-55 to +110
-55 to +110
-55 to +110
Storage temperature
Tstg
(贑)
-55 to +110
-55 to +110
-55 to +110
Soldering temperature
Tsol
*2
(贑)
295
295
295
Model No.
(Ta=25贑)
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on page 2.
I Absolute Maximum Ratings
Peak emission
wavelength
?SPAN class="pst GM5JV95200AE_2653430_7">p(nm)
TYP
Model No.
Forward voltage
VF(V)
Page for
characteristics
diagrams
Dominant
wavelength
?SPAN class="pst GM5JV95200AE_2653430_7">d(nm)
TYP
Luminous
intensity
IV(mcd)
TYP
Reverse current
Terminal capacitance
VR
(V)
(MHz)
Colorless
transparency
TYP
2.2
2.2
2.2
MAX
2.6
2.6
2.6
627
609
591
618
605
588
70
90
80
Spectrum radiation
bandwidth
?nm)
TYP
15
15
15
100
100
100
4
4
4
60
60
60
1
1
1
50
51
51
GM5JJ95200AE
GM5JS95200AE
GM5JV95200AE
(IF=20mA,Ta=25贑)
Lens type
IR(礎)
MAX
Ct(pF)
TYP
I Electro-optical Characteristics
(Unit : mm)
(Ta=25贑)
GM5JO95200AE series
3528 Size, 1.9mm Thickness,
Leadless Chip LED
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